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textbook:nrctextbook:chapter11 [2025-01-22 21:19] Merja Herzig |
textbook:nrctextbook:chapter11 [2025-04-24 14:07] (current) Merja Herzig |
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| - | In an ordinary radiochemical laboratory the alpha-emitting radionuclides studied are those listed in Table XI.I. Of these Po, Ra, Th and U isotopes are naturally occurring radionuclides while Pu and Am isotopes are artificial transuranium nuclides. The natural alpha-emitting radionuclides belong to the decay series beginning from < | + | In an ordinary radiochemical laboratory the alpha-emitting radionuclides studied are those listed in [[textbook: |
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| Table XI.I. Most typical alpha-emitting radionuclides studied in radiochemical laboratories. | Table XI.I. Most typical alpha-emitting radionuclides studied in radiochemical laboratories. | ||
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| + | ===== 11.1.Semiconductor detectors for alpha spectroscopy ===== | ||
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| + | Semiconductor detectors were discussed already in chapter IX where [[textbook: | ||
| + | silicon, only 30 μm. Typically the depletion zone in silicon detectors used in alpha spectrometry is 100-200 μm. There are two types of silicon detectors in production (Figure XI.1): surface barrier detectors (SBB) and passivated ion-implanted detectors (PIPS) the latter being a more modern construction mode. | ||
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| + | Figure XI.1. Production of silicon detectors for alpha spectrometry. Left: surface barrier detectors. Right: Passivated ion-implanted detector. (http:// | ||
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| + | To produce a detector, the edges of a silicon wafer, with thickness less than 500 µm, are first insulated from each other to prevent continuous current across the wafer. In SBB detectors the insulation is done with epoxy resin and a ring mounted around the wafer. In PIPS detectors the surface of the wafer is first passivated by heating which results in the formation of about 50 nm thick non-conducting SiO< | ||
| + | p-type layer and the other side with donor atoms to produce n-type layer. In the SBB detectors this is accomplished by forming a thin, 100-200 nm, layer of Au on the other side (n-type) and a layer of Al on the other (p-type). In PIPS detectors this is done by ion-implantation technique by bombarding high energy atoms on the sides. The PIPS detectors have several advantages over SSB detectors: | ||
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| + | * The surface layer is mechanically and chemically more resistant and can be cleaned with alcohol, for example. In SBB detectors the gold surface is very sensitive and cannot be touched at all. | ||
| + | * The “window”, | ||
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| + | The detectors are rather small in size (Figure XI.2.) Their diameters are only 2 to 4 centimeters and thickness less than 500 µm (about 1 cm including the metallic cover). Table XI.II. shows properties of alpha detectors available from Canberra. As seen from the table the [[textbook: | ||
| + | selection depends naturally on what is needed, high resolution or high efficiency. When measuring [[textbook: | ||
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| + | Figure XI.2. Canberra alpha detectors (http:// | ||
| + | passivated_pips_C39313a.pdf).\\ | ||
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| + | Table XI.II. Properties of Canberra silicon detectors for alpha spectrometry (http:// | ||
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| + | ^Active area (mm< | ||
| + | |300|20|17|4| | ||
| + | |450|24|18|18| | ||
| + | |600|28|22|22| | ||
| + | |900|34|25|25| | ||
| + | |1200|39|32|32| | ||
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| + | ===== 11.2. Alpha spectrometry ===== | ||
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| + | Figure XI.3 shows the components of an alpha spectrometer. The planar sample is placed in front of the detector and close to it. Both detector and sample are placed in a vacuum chamber to prevent [[textbook: | ||
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| + | Figure XI.3. Electronics in alpha spectrometry (http:// | ||
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| + | Prior to counting the [[textbook: | ||
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| + | ===== 11.3. Sample preparation for alpha spectrometry ===== | ||
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| + | At the end of a radiochemical separation procedure a counting source for alpha spectrometry is prepared. This is done either by electrodeposition of the target element on a steel plate or by microcoprecipitation. The purpose of both methods is to produce a very thin counting source to prevent [[textbook: | ||
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| + | measurements, | ||
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| + | Another way to prepare counting sources is microcoprecipitation typically used for actinides. The coprecipitation is carried out with lanthanide fluorides: 10–50 μg La, Ce or Nd is added to the solution and the fluoride (LaF< | ||
| + | +III and +IV the higher oxidation states must be reduced prior to coprecipitation. After precipitation, | ||
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| + | The [[textbook: | ||
| + | the course of the separation procedure and the same fraction of both isotopes is recovered in the counting source. Due to their different alpha energies the two isotopes can be distinguished from alpha spectrum ([[textbook: | ||
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